Spin Memristive Magnetic Tunnel Junctions with CoO-ZnO Nano Composite Barrier

Overview

Journal Sci Rep

Specialty Science

Date 2014 Jan 24

PMID 24452305

Citations 7

Authors

Qiang Li

Ting-Ting Shen

Yan-Ling Cao

Kun Zhang

Shi-Shen Yan

Yu-Feng Tian

Shi-Shou Kang

Ming-Wen Zhao

You-Yong Dai

Yan-Xue Chen

Guo-Lei Liu

Liang-Mo Mei

Xiao-Lin Wang

Peter Grunberg

Affiliations

Soon will be listed here.

Abstract

The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanoscale junction, because it is very hard to find a proper spacer layer which not only serves as good insulating layer for tunneling magnetoresistance but also easily switches between high and low resistance states under electrical field. Here we firstly propose to use nanon composite barrier layers of CoO-ZnO to fabricate the spin memristive Co/CoO-ZnO/Co magnetic tunnel junctions. The bipolar resistance switching ratio is high up to 90, and the TMR ratio of the high resistance state gets to 8% at room temperature, which leads to three resistance states. The bipolar resistance switching is explained by the metal-insulator transition of CoO(1-v) layer due to the migration of oxygen ions between CoO(1-v) and ZnO(1-v).

Citing Articles

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