Wetting and Surface Energy of Vertically Aligned Silicon Nanowires

The vertically aligned silicon nanowires (SiNWs) have been synthesized by metal assisted chemical etching process on commercially available p type silicon wafer. The aspect ratios of the SiNWs have been modified by simply varying the etching time. The microstructures of the as prepared samples have been investigated with the field emission scanning electron microscope as well as with a high resolution transmission electron microscope. The bonding information has been obtained by Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy. The contact angles for water with the as-prepared SiNWs films were measured and found to be highly dependent upon the aspect ratio of the as synthesized wires. For obtaining a deep insight regarding the reasons behind this dependence the surface energies of the as prepared SiNWs films have been calculated by Owens method using two liquids, water and glycerol. The porosity of the films has been calculated indirectly from the equilibrium equations. It has been found that the etching time has a profound effect on the aspect ratio and thus on the surface energy of SiNWs that governs the wetting behaviour of the as prepared samples.