Universal Electric-field-driven Resistive Transition in Narrow-gap Mott Insulators
Overview
Authors
Affiliations
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.
Mott resistive switching initiated by topological defects.
Milloch A, Figueruelo-Campanero I, Hsu W, Mor S, Mellaerts S, Maccherozzi F Nat Commun. 2024; 15(1):9414.
PMID: 39482287 PMC: 11527880. DOI: 10.1038/s41467-024-53726-z.
Picosecond Femtojoule Resistive Switching in Nanoscale VO Memristors.
Schmid S, Posa L, Torok T, Santa B, Pollner Z, Molnar G ACS Nano. 2024; 18(33):21966-21974.
PMID: 39115225 PMC: 11342367. DOI: 10.1021/acsnano.4c03840.
Correlated insulator collapse due to quantum avalanche via in-gap ladder states.
Han J, Aron C, Chen X, Mansaray I, Han J, Kim K Nat Commun. 2023; 14(1):2936.
PMID: 37217490 PMC: 10203265. DOI: 10.1038/s41467-023-38557-8.
Nanoscale self-organization and metastable non-thermal metallicity in Mott insulators.
Ronchi A, Franceschini P, De Poli A, Homm P, Fitzpatrick A, Maccherozzi F Nat Commun. 2022; 13(1):3730.
PMID: 35764628 PMC: 9240065. DOI: 10.1038/s41467-022-31298-0.
Non-thermal resistive switching in Mott insulator nanowires.
Kalcheim Y, Camjayi A, Del Valle J, Salev P, Rozenberg M, Schuller I Nat Commun. 2020; 11(1):2985.
PMID: 32532988 PMC: 7293290. DOI: 10.1038/s41467-020-16752-1.