GaAs Nanopillar-array Solar Cells Employing in Situ Surface Passivation

Overview

Journal Nat Commun

Specialty Biology

Date 2013 Feb 21

PMID 23422665

Citations 27

Authors

Giacomo Mariani

Adam C Scofield

Chung-Hong Hung

Diana L Huffaker

Affiliations

Soon will be listed here.

Abstract

Arrays of III-V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p-n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm(-2) and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode.

Citing Articles

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References

Yao Y, Yao J, Narasimhan V, Ruan Z, Xie C, Fan S . Broadband light management using low-Q whispering gallery modes in spherical nanoshells. Nat Commun. 2012; 3:664. DOI: 10.1038/ncomms1664. View

Cao L, White J, Park J, Schuller J, Clemens B, Brongersma M . Engineering light absorption in semiconductor nanowire devices. Nat Mater. 2009; 8(8):643-7. DOI: 10.1038/nmat2477. View

Tajik N, Peng Z, Kuyanov P, LaPierre R . Sulfur passivation and contact methods for GaAs nanowire solar cells. Nanotechnology. 2011; 22(22):225402. DOI: 10.1088/0957-4484/22/22/225402. View

Agrawal M, Peumans P . Broadband optical absorption enhancement through coherent light trapping in thin-film photovoltaic cells. Opt Express. 2008; 16(8):5385-96. DOI: 10.1364/oe.16.005385. View

Dan Y, Seo K, Takei K, Meza J, Javey A, Crozier K . Dramatic reduction of surface recombination by in situ surface passivation of silicon nanowires. Nano Lett. 2011; 11(6):2527-32. DOI: 10.1021/nl201179n. View

Wang X, Chen L, Shang M, Lin F, Hu J, Richards R . Nanoscale gold intercalated into mesoporous silica as a highly active and robust catalyst. Nanotechnology. 2012; 23(29):294010. DOI: 10.1088/0957-4484/23/29/294010. View

Takahashi T, Takei K, Adabi E, Fan Z, Niknejad A, Javey A . Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics. ACS Nano. 2010; 4(10):5855-60. DOI: 10.1021/nn1018329. View

Tang J, Huo Z, Brittman S, Gao H, Yang P . Solution-processed core-shell nanowires for efficient photovoltaic cells. Nat Nanotechnol. 2011; 6(9):568-72. DOI: 10.1038/nnano.2011.139. View

Garnett E, Tseng Y, Khanal D, Wu J, Bokor J, Yang P . Dopant profiling and surface analysis of silicon nanowires using capacitance-voltage measurements. Nat Nanotechnol. 2009; 4(5):311-4. DOI: 10.1038/nnano.2009.43. View

10.

Koren E, Berkovitch N, Rosenwaks Y . Measurement of active dopant distribution and diffusion in individual silicon nanowires. Nano Lett. 2010; 10(4):1163-7. DOI: 10.1021/nl9033158. View

11.

Bjork M, Schmid H, Knoch J, Riel H, Riess W . Donor deactivation in silicon nanostructures. Nat Nanotechnol. 2009; 4(2):103-7. DOI: 10.1038/nnano.2008.400. View

12.

Lin A, Shapiro J, Senanayake P, Scofield A, Wong P, Liang B . Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy. Nanotechnology. 2012; 23(10):105701. DOI: 10.1088/0957-4484/23/10/105701. View

13.

Perea D, Hemesath E, Schwalbach E, Lensch-Falk J, Voorhees P, Lauhon L . Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire. Nat Nanotechnol. 2009; 4(5):315-9. DOI: 10.1038/nnano.2009.51. View

14.

Tian B, Zheng X, Kempa T, Fang Y, Yu N, Yu G . Coaxial silicon nanowires as solar cells and nanoelectronic power sources. Nature. 2007; 449(7164):885-9. DOI: 10.1038/nature06181. View

15.

Cirlin G, Bouravleuv A, Soshnikov I, Samsonenko Y, Dubrovskii V, Arakcheeva E . Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate. Nanoscale Res Lett. 2010; 5(2):360-3. PMC: 2894346. DOI: 10.1007/s11671-009-9488-2. View

16.

Mariani G, Wong P, Katzenmeyer A, Leonard F, Shapiro J, Huffaker D . Patterned radial GaAs nanopillar solar cells. Nano Lett. 2011; 11(6):2490-4. DOI: 10.1021/nl200965j. View

17.

Kupec J, Stoop R, Witzigmann B . Light absorption and emission in nanowire array solar cells. Opt Express. 2011; 18(26):27589-605. DOI: 10.1364/OE.18.027589. View

18.

Yu Z, Raman A, Fan S . Fundamental limit of nanophotonic light trapping in solar cells. Proc Natl Acad Sci U S A. 2010; 107(41):17491-6. PMC: 2955111. DOI: 10.1073/pnas.1008296107. View

19.

Garnett E, Yang P . Silicon nanowire radial p-n junction solar cells. J Am Chem Soc. 2008; 130(29):9224-5. DOI: 10.1021/ja8032907. View

20.

Pattantyus-Abraham A, Kramer I, Barkhouse A, Wang X, Konstantatos G, Debnath R . Depleted-heterojunction colloidal quantum dot solar cells. ACS Nano. 2010; 4(6):3374-80. DOI: 10.1021/nn100335g. View