Manipulating Surface States in Topological Insulator Nanoribbons

Overview

Journal Nat Nanotechnol

Specialty Biotechnology

Date 2011 Feb 15

PMID 21317891

Citations 55

Authors

Faxian Xiu

Liang He

Yong Wang

Lina Cheng

Li-Te Chang

Murong Lang

Guan Huang

Xufeng Kou

Yi Zhou

Xiaowei Jiang

Zhigang Chen

Jin Zou

Alexandros Shailos

Kang L Wang

Affiliations

Soon will be listed here.

Abstract

Topological insulators display unique properties, such as the quantum spin Hall effect, because time-reversal symmetry allows charges and spins to propagate along the edge or surface of the topological insulator without scattering. However, the direct manipulation of these edge/surface states is difficult because they are significantly outnumbered by bulk carriers. Here, we report experimental evidence for the modulation of these surface states by using a gate voltage to control quantum oscillations in Bi(2)Te(3) nanoribbons. Surface conduction can be significantly enhanced by the gate voltage, with the mobility and Fermi velocity reaching values as high as ~5,800 cm(2) V(-1) s(-1) and ~3.7 × 10(5) m s(-1), respectively, with up to ~51% of the total conductance being due to the surface states. We also report the first observation of h/2e periodic oscillations, suggesting the presence of time-reversed paths with the same relative zero phase at the interference point. The high surface conduction and ability to manipulate the surface states demonstrated here could lead to new applications in nanoelectronics and spintronics.

Citing Articles

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Aharonov-Bohm Interference and Phase-Coherent Surface-State Transport in Topological Insulator Rings.

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Topological signatures in the entanglement of a topological insulator-quantum dot hybrid.

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