» Articles » PMID: 20730817

Electrical Transport and High-performance Photoconductivity in Individual ZrS(2) Nanobelts

Overview
Journal Adv Mater
Date 2010 Aug 24
PMID 20730817
Citations 19
Authors
Affiliations
Soon will be listed here.
Abstract

Individual ZrS(2)-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS(2)-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.

Citing Articles

First-principles study on the electronic structure and photocatalytic property of a novel two-dimensional ZrS/InSe heterojunction.

Luan L, Sun K, Zhang D, Bai K, Han L, Xu C RSC Adv. 2023; 13(16):11150-11159.

PMID: 37056969 PMC: 10086572. DOI: 10.1039/d2ra08000a.


The growth mechanism and intriguing optical and electronic properties of few-layered HfS.

Singh J, Shao J, Chen G, Wu H, Tsai M Nanoscale Adv. 2023; 5(1):171-178.

PMID: 36605793 PMC: 9765574. DOI: 10.1039/d2na00578f.


High-performance ultra-violet phototransistors based on CVT-grown high quality SnS flakes.

Ying H, Li X, Wu Y, Yao Y, Xi J, Su W Nanoscale Adv. 2022; 1(10):3973-3979.

PMID: 36132114 PMC: 9418408. DOI: 10.1039/c9na00471h.


Triangular radial NbO nanorod growth on -plane sapphire for ultraviolet-radiation detection.

Kim K, Kim B, Lee S, Nasir T, Lim H, Choi I RSC Adv. 2022; 8(54):31066-31070.

PMID: 35548753 PMC: 9085467. DOI: 10.1039/c8ra06139d.


The magnetism of 1T-MX (M = Zr, Hf; X = S, Se) monolayers by hole doping.

Xiang H, Xu B, Zhao W, Xia Y, Yin J, Zhang X RSC Adv. 2022; 9(24):13561-13566.

PMID: 35519557 PMC: 9063905. DOI: 10.1039/c9ra01218d.