Determination of Energy Band Gap of Nanocrystalline SbSI Using Diffuse Reflectance Spectroscopy

Twelve methods of determining energy band gap (E(g)) of semiconductors using diffuse reflectance spectroscopy have been applied in investigations of sonochemically produced antimony sulfoiodide (SbSI) consisting of nanowires. It has been proved that the best method of determining E(g) is based on simultaneous fitting of many mechanisms of absorption to the spectral dependence of Kubelka-Munk function evaluated from the diffuse reflectance data. It allows determining the values of indirect forbidden E(g), the Urbach energy, and the constant absorption/scattering of the examined semiconductor.