Rapid Photoreflectance Spectroscopy for Strained Silicon Metrology
Overview
Overview
Journal
Rev Sci Instrum
Publisher
American Institute of Physics
Specialties
Biomedical Engineering
Biophysics
Biophysics
Date
2008 Dec 3
PMID
19044701
Authors
Authors
Affiliations
Affiliations
Soon will be listed here.
Abstract
We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.