Origin of Self-limiting Oxidation of Si Nanowires

Overview

Journal Nano Lett

Publisher American Chemical Society

Specialty Biotechnology

Date 2008 Aug 6

PMID 18680350

Citations 7

Authors

H Cui

C X Wang

G W Yang

Affiliations

Soon will be listed here.

Abstract

A new kinetic model is suggested to describe the self-limiting oxidation of Si nanowires by only considering the diffusion step with the influence of stress due to the two-dimension nonuniform deformation of the oxide but not including any rate-limiting step for interfacial reaction. It is assumed the stress results in the change of distribution of diffusion activation energy in the high density region which rises monotonically along with the oxidation, and may be the main physical origin of the self-limiting oxidation behavior of SiNWs. Moreover, the present kinetic model can excellently describe the experimental results for the wide initial diameter over the range of self-limiting oxidation temperature.

Citing Articles

Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones.

Jonker D, Berenschot E, Tas N, Tiggelaar R, van Houselt A, Gardeniers H Nanoscale Res Lett. 2022; 17(1):100.

PMID: 36245035 PMC: 9573847. DOI: 10.1186/s11671-022-03735-y.

Propagation of amorphous oxide nanowires the VLS mechanism: growth kinetics.

Shakthivel D, Navaraj W, Champet S, Gregory D, Dahiya R Nanoscale Adv. 2022; 1(9):3568-3578.

PMID: 36133567 PMC: 9418775. DOI: 10.1039/c9na00134d.

Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap.

Gao S, Hong S, Park S, Jung H, Liang W, Lee Y Nat Commun. 2022; 13(1):3467.

PMID: 35725850 PMC: 9209539. DOI: 10.1038/s41467-022-31174-x.

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays.

Guniat L, Ghisalberti L, Wang L, Dais C, Morgan N, Dede D Nanoscale Horiz. 2022; 7(2):211-219.

PMID: 35040457 PMC: 8802830. DOI: 10.1039/d1nh00553g.

Variance Reduction during the Fabrication of Sub-20 nm Si Cylindrical Nanopillars for Vertical Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistors.

Ye S, Yamabe K, Endoh T ACS Omega. 2019; 4(25):21115-21121.

PMID: 31867504 PMC: 6921678. DOI: 10.1021/acsomega.9b02520.