Jiao S, Zhao K, Jiang J, Zhao K, Guo Q, Wang J
Nanophotonics. 2024; 13(9):1645-1655.
PMID: 39678182
PMC: 11636409.
DOI: 10.1515/nanoph-2024-0005.
Du R, Wang W, Lin H, Zhang X, Wu H, Zhu B
Nanophotonics. 2024; 13(19):3663-3670.
PMID: 39635028
PMC: 11465980.
DOI: 10.1515/nanoph-2024-0084.
Zhao K, Han W, Han Z, Zhang X, Zhang X, Duan X
Nanophotonics. 2024; 11(13):3101-3113.
PMID: 39634662
PMC: 11501491.
DOI: 10.1515/nanoph-2022-0133.
Agarwal S, Dwivedi D, Lohia P, Gupta M
RSC Adv. 2024; 14(41):29812-29826.
PMID: 39301234
PMC: 11411635.
DOI: 10.1039/d4ra05458j.
Oh J, Zaman R, Murthy A, Bal M, Crisa F, Zhu S
ACS Nano. 2024; .
PMID: 39034612
PMC: 11295204.
DOI: 10.1021/acsnano.4c05251.
Ab Initio Study of Novel Phase-Change Heterostructures.
Piombo R, Ritarossi S, Mazzarello R
Adv Sci (Weinh). 2024; 11(29):e2402375.
PMID: 38812119
PMC: 11304324.
DOI: 10.1002/advs.202402375.
Ultrafast modulation of electronic structure by coherent phonon excitations.
Weisshaupt J, Rouzee A, Woerner M, Vrakking M, Elsaesser T, Shirley E
Phys Rev B. 2024; 95(8).
PMID: 38618525
PMC: 11015475.
DOI: 10.1103/PhysRevB.95.081101.
Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet.
Wu H, Chen L, Malinowski P, Jang B, Deng Q, Scott K
Nat Commun. 2024; 15(1):2739.
PMID: 38548765
PMC: 10978849.
DOI: 10.1038/s41467-024-46862-z.
A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer.
Qu S, Gao L, Wang J, Chen H, Zhang J
Micromachines (Basel). 2024; 15(3).
PMID: 38542627
PMC: 10972129.
DOI: 10.3390/mi15030380.
Reconfigurable Micro/Nano-Optical Devices Based on Phase Transitions: From Materials, Mechanisms to Applications.
Li C, Pan R, Gu C, Guo H, Li J
Adv Sci (Weinh). 2024; 11(20):e2306344.
PMID: 38489745
PMC: 11132080.
DOI: 10.1002/advs.202306344.
Tailoring chemical bonds to design unconventional glasses.
Raty J, Bichara C, Schon C, Gatti C, Wuttig M
Proc Natl Acad Sci U S A. 2024; 121(2):e2316498121.
PMID: 38170754
PMC: 10786265.
DOI: 10.1073/pnas.2316498121.
A Complicated Route from Disorder to Order in Antimony-Tellurium Binary Phase Change Materials.
Zheng Y, Song W, Song Z, Zhang Y, Xin T, Liu C
Adv Sci (Weinh). 2023; 11(9):e2301021.
PMID: 38133500
PMC: 10916584.
DOI: 10.1002/advs.202301021.
Four-Layer Surface Plasmon Resonance Structures with Amorphous AsS Chalcogenide Films: A Review.
Popescu A, Savastru D, Stafe M, Puscas N
Materials (Basel). 2023; 16(18).
PMID: 37763387
PMC: 10532984.
DOI: 10.3390/ma16186110.
Electronic and Transport Properties of Strained and Unstrained GeSbTe: A DFT Investigation.
Tian J, Ma W, Boulet P, Record M
Materials (Basel). 2023; 16(14).
PMID: 37512289
PMC: 10385833.
DOI: 10.3390/ma16145015.
Phase-change materials based on amorphous equichalcogenides.
Golovchak R, Plummer J, Kovalskiy A, Holovchak Y, Ignatova T, Trofe A
Sci Rep. 2023; 13(1):2881.
PMID: 36801904
PMC: 9938898.
DOI: 10.1038/s41598-023-30160-7.
Effect of temperature on structural, dynamical, and electronic properties of ScTe from first-principles calculations.
Zewdie G, Debela T, Asres G
RSC Adv. 2022; 12(51):32796-32802.
PMID: 36425197
PMC: 9665046.
DOI: 10.1039/d2ra05720d.
Phase change thin films for non-volatile memory applications.
Lotnyk A, Behrens M, Rauschenbach B
Nanoscale Adv. 2022; 1(10):3836-3857.
PMID: 36132100
PMC: 9419560.
DOI: 10.1039/c9na00366e.
Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials.
Zhang S, Chen X, Liu K, Li H, Lang Y, Han J
iScience. 2022; 25(8):104866.
PMID: 35996583
PMC: 9391584.
DOI: 10.1016/j.isci.2022.104866.
Structural disorder in the high-temperature cubic phase of GeTe.
Xu M, Lei Z, Yuan J, Xue K, Guo Y, Wang S
RSC Adv. 2022; 8(31):17435-17442.
PMID: 35539235
PMC: 9080495.
DOI: 10.1039/c8ra02561d.
Enhanced reliability of phase-change memory modulation of local structure and chemical bonding by incorporating carbon in GeSbTe.
Han J, Jeong H, Park H, Kwon H, Kim D, Lim D
RSC Adv. 2022; 11(36):22479-22488.
PMID: 35480803
PMC: 9034215.
DOI: 10.1039/d1ra02210e.